Journal
NANO LETTERS
Volume 16, Issue 9, Pages 5688-5693Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b02351
Keywords
Plasmonics; field-effect; near-field optical microscopy; semiconductor nanowire; doping engineering; sensors
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Funding
- EC under the Graphene Flagship program [CNECT-ICT-604391]
- MIUR [RBFR13NEA4]
- ERC [G.A. 321122]
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We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in, the mid-infrared region. We adopt InAs nano-Wires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.
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