Exploring room temperature spin transport under band gap opening in bilayer graphene

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.

Automated summary

We investigate the controllability of charge and spin transport in high-quality bilayer graphene encapsulated with hBN and contacted via 1D spin injectors at room temperature. We demonstrate that spin transport in this device architecture is measurable and its parameters can be modulated by opening a band gap through a perpendicular displacement field. The modulation of spin current is primarily achieved by controlling the spin relaxation time with the displacement field, showcasing the fundamental operation of a spin-based field-effect transistor.