Journal
NANO LETTERS
Volume 16, Issue 2, Pages 877-882Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03587
Keywords
Planar nanowire; InAsSb; growth direction; HRTEM; CAFM
Categories
Funding
- MOST of China [2012CB932701]
- National Natural Science Foundation of China [91433206, 61204076]
- Chinese Academy of Sciences [XDA04020411]
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We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.
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