Silicon-based mid infrared on-chip gas sensor using Fano resonance of coupled plasmonic microcavities

Sensing in the mid infrared spectral range is highly desirable for the detection and monitoring of different gases. We hereby propose a CMOS compatible silicon-based sensor that operates at (3.510 mu m) within the mid infrared range. The silicon material is doped to the level that shifts its plasmonic resonance to 3 mu m wavelength. The sensor device comprises an in-line rectangular microcavity and a stub microcavity resonator. The resonance frequencies/wavelengths of the two resonators were studied with different design dimensions. When the two resonators are designed to resonate at close frequencies, the interesting Fano resonance with its distinct and sharp line shape is excited due to the interference between the two resonance profiles. Fano resonance is useful for highly sensitive measurements due to its abrupt intensity changing profile. The sensor is studied and analyzed using Finite Difference Element and 2D Finite Difference Time Domain methods. The sensor's performance is characterized by its high sensitivity of 6000 nm/RIU, FOM of 353, and limited insertion loss of 0.45 dB around 6.5 mu m operation wavelength. Furthermore, we develop the sensor for simultaneously detecting formaldehyde CH2O and nitrous oxide N2O gases from their strong absorption bands at 3.6 mu m and 4.46 mu m wavelengths, respectively.

Automated summary

We propose a CMOS compatible silicon-based sensor for mid infrared sensing, which exhibits high sensitivity, distinct Fano resonance, and limited insertion loss.