Journal
NANO LETTERS
Volume 16, Issue 8, Pages 4738-4745Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b05107
Keywords
angle-resolved photoemission spectroscopy; band structure; transition metal dichalcogenides; valleytronics
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Funding
- EPSRC [EP/M020517/1]
- Hefei Science Center CAS [2015HSC-UE013]
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- DoE, BES, Division of Materials Sciences and Engineering [DE-SC0008145]
- Engineering and Physical Sciences Research Council [EP/K04074X/1, EP/M020517/1] Funding Source: researchfish
- EPSRC [EP/K04074X/1, EP/M020517/1] Funding Source: UKRI
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Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.
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