Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations

This paper presents an improved theoretical view of ab initio thermodynamics for polar GaN surfaces under gallium-rich conditions. The study uses density functional theory (DFT) calculations to systematically investigate the adsorption of gallium atoms on GaN polar surfaces, starting from the clean surface and progressing to the metallic multilayer. First principles phonon calculations are performed to determine vibrational free energies. Changes in the chemical potential of gallium adatoms are determined as a function of temperature and surface coverage. Three distinct ranges of Ga coverage with very low, medium, and high chemical potential are observed on the GaN(000-1) surface, while only two ranges with medium and high chemical potential are observed on the GaN(000-1) surface. The analysis confirms that a monolayer of Ga adatoms on the GaN(000-1) surface is highly stable over a wide range of temperatures. For a second adlayer at higher temperatures, it is energetically more favorable to form liquid droplets than a uniform crystalline adlayer. The second Ga layer on the GaN(0001) surface shows pseudo-crystalline properties even at a relatively high temperature. These results provide a better thermodynamic description of the surface state under conditions typical for molecular beam epitaxy and offer an interpretation of the observed growth window.

Automated summary

This paper presents an improved theoretical view of ab initio thermodynamics for polar GaN surfaces under gallium-rich conditions. The study uses density functional theory (DFT) calculations to systematically investigate the adsorption of gallium atoms on GaN polar surfaces, starting from the clean surface and progressing to the metallic multilayer. The analysis confirms that a monolayer of Ga adatoms on the GaN(000-1) surface is highly stable over a wide range of temperatures and provides a better thermodynamic description of the surface state under conditions typical for molecular beam epitaxy.