Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System

RRAM devices operating based on the creation of conductive filaments via the migration of oxygen vacancies are widely studied as promising candidates for next-generation memory devices due to their superior memory characteristics. However, the issues of variation in the resistance state and operating voltage remain key issues that must be addressed. In this study, we propose a TaOx/SiO2 bilayer device, where the inserted SiO2 layer localizes the conductive path, improving uniformity during cycle-to-cycle endurance and retention. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) confirm the device structure and chemical properties. In addition, various electric pulses are used to investigate the neuromorphic system properties of the device, revealing its good potential for future memory device applications.

Automated summary

In this study, a TaOx/SiO2 bilayer device is proposed to improve the uniformity of cycle-to-cycle endurance and retention by localizing the conductive path with the inserted SiO2 layer. TEM and XPS analysis confirm the device structure and chemical properties. The experimental results show that the device has great potential for future memory device applications.