Journal
EUROPEAN PHYSICAL JOURNAL PLUS
Volume 138, Issue 10, Pages -Publisher
SPRINGER HEIDELBERG
DOI: 10.1140/epjp/s13360-023-04522-z
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Due to their excellent in-plane thermal transport properties, graphene, hexagonal boron nitride, and their heterostructures have great potential in thermal management applications. This study investigated the in-plane thermal conductivity of G/hBN van der Waals heterostructures and found that the TC of G/hBN vdW heterostructures increased by 16% compared to monolayer hBN. The addition of graphene increased the TC of multilayer hBN by 60%. The interlayer coupling strength affected the TC of G/hBN vdW heterostructures, which was influenced by the number of layers and vertical thermal transport.
Due to their excellent in-plane thermal transport properties, graphene (G), hexagonal boron nitride (hBN), and their heterostructures have broad application prospects in the field of thermal management. The in-plane thermal conductivity (TC) of G/hBN van der Waals (vdW) heterostructures by nonequilibrium molecular dynamics (NEMD) method were investigated in this study. The results show that the TC of G/hBN vdW heterostructures is up to similar to 384 Wm(-1) K-1 at 300 K, an increase of similar to 16% compared to that of monolayer hBN. The TC of multilayer hBN is increased by up to similar to 60% with the addition of 6 layers of graphene. The effect of interlayer coupling strength on the TC of G/hBN vdW heterostructures is related to the number of layers and vertical thermal transport. The TC of the G/hBN vdW heterostructures is decreased by similar to 30-36% from 300 to 500 K. This work provides valuable references for the application of graphene and hBN in electronic devices to solve thermal management problems.
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