4.8 Article

Short-wave infrared cavity resonances in a single GeSn nanowire

Related references

Note: Only part of the references are listed.
Article Materials Science, Multidisciplinary

Enhanced GeSn Microdisk Lasers Directly Released on Si

Youngmin Kim et al.

Summary: By fully releasing strain-free GeSn microdisk laser devices on Si, both the relaxation of compressive strain and excellent thermal conduction are achieved, outperforming traditional suspended devices. Optical simulations demonstrate superior optical confinement and thermal simulations show negligible temperature increase, enabling higher operation temperatures and reduced lasing thresholds.

ADVANCED OPTICAL MATERIALS (2022)

Article Nanoscience & Nanotechnology

Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires

Lu Luo et al.

Summary: Group IV Ge1-xSnx semiconductors have tunable band gap energy and directness, and their attributes are exploited to implement highly responsive room-temperature short-wave infrared nanoscale photodetectors in Ge/Ge0.92Sn0.08 core/shell nanowire hetero-structures. The demonstrated Ge/Ge(0.92)Sn(0.08)p-type field-effect nanowire transistors exhibit superior optoelectronic properties and achieve broadband absorption in the short-wave infrared range.

ACS PHOTONICS (2022)

Article Optics

Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density

Yongduck Jung et al.

Summary: This study demonstrates the significant improvement in the lasing threshold of GeSn lasers by reducing the defect density in GeSn-on-insulator substrate, leading to enhanced spontaneous emission and lower threshold.

PHOTONICS RESEARCH (2022)

Article Physics, Applied

1D photonic crystal direct bandgap GeSn-on-insulator laser

Hyo-Jun Joo et al.

Summary: GeSn alloys are considered as potential lasing materials, but current GeSn lasers suffer from large device footprints and active areas. Researchers have developed a strain-free nanobeam laser with smaller device footprint and active area, showing lower threshold density and higher operating temperature compared to compressive strained counterparts. This development paves the way for practical group-IV light sources with high-density integration and low power consumption.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors

O. Moutanabbir et al.

Summary: (Si)GeSn semiconductors have reached maturity after a long gestation period, but still face challenges including high-quality layer and heterostructure growth, material integrity preservation, and doping, defect density control. Overcoming these challenges will enable applications in infrared photonics and provide opportunities for infrared photodetectors, sensors, and emitters.

APPLIED PHYSICS LETTERS (2021)

Article Optics

GeSnOI mid-infrared laser technology

Binbin Wang et al.

Summary: GeSn alloys are promising materials for manufacturing CMOS-compatible mid-infrared lasers, with the potential to transform into direct bandgap semiconductors through Sn alloying and tensile strain. However, current laser technology faces limitations such as poor optical confinement and lack of strain, thermal, and defects management. The GeSnOI approach demonstrates potential for integrating planar Group-IV semiconductor lasers on a versatile photonic platform, offering improved optical gain and vertical out-coupling efficiency for mid-infrared photonics development.

LIGHT-SCIENCE & APPLICATIONS (2021)

Article Chemistry, Multidisciplinary

Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires

Andrew C. Meng et al.

Summary: Core-shell Ge/GeSn nanowires offer a pathway to dislocation-free single crystal germanium-tin alloys with desirable light emission properties during GeSn shell growth. However, the uniformity of tin incorporation may be limited by the balance between Sn precursor flux and available surfaces for GeSn nucleation and growth. Insufficient Sn precursor delivery or nanowire surface area can result in defect formation during GeSn shell growth.

NANOSCALE (2021)

Article Chemistry, Multidisciplinary

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

Simone Assali et al.

ACS NANO (2020)

Article Optics

On-chip single-mode CdS nanowire laser

Qingyang Bao et al.

LIGHT-SCIENCE & APPLICATIONS (2020)

Article Materials Science, Multidisciplinary

Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission

Andrew C. Meng et al.

MATERIALS TODAY (2020)

Article Chemistry, Multidisciplinary

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Michael S. Seifner et al.

ACS NANO (2019)

Article Physics, Applied

Strain engineering in Ge/GeSn core/shell nanowires

S. Assali et al.

APPLIED PHYSICS LETTERS (2019)

Article Chemistry, Multidisciplinary

Mid-Infrared Lasing of Single Wurtzite InAs Nanowire

Hisashi Sumikura et al.

NANO LETTERS (2019)

Article Chemistry, Multidisciplinary

Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires

Marco Albani et al.

NANOSCALE (2018)

Article Chemistry, Multidisciplinary

Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays

S. Assali et al.

NANO LETTERS (2017)

Article Chemistry, Multidisciplinary

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

S. Koelling et al.

NANO LETTERS (2017)

Article Multidisciplinary Sciences

Low-threshold optically pumped lasing in highly strained germanium nanowires

Shuyu Bao et al.

NATURE COMMUNICATIONS (2017)

Article Engineering, Electrical & Electronic

Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers

David Sukhdeo et al.

IEEE ELECTRON DEVICE LETTERS (2016)

Article Multidisciplinary Sciences

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires

Subhajit Biswas et al.

NATURE COMMUNICATIONS (2016)

Review Nanoscience & Nanotechnology

Semiconductor nanowire lasers

Samuel W. Eaton et al.

NATURE REVIEWS MATERIALS (2016)

Article Optics

Lasing in direct-bandgap GeSn alloy grown on Si

S. Wirths et al.

NATURE PHOTONICS (2015)

Article Optics

Room-temperature lasing in a single nanowire with quantum dots

Jun Tatebayashi et al.

NATURE PHOTONICS (2015)

Article Optics

Optically pumped room-temperature GaAs nanowire lasers

Dhruv Saxena et al.

NATURE PHOTONICS (2013)

Article Materials Science, Multidisciplinary

Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura et al.

PHYSICAL REVIEW B (2012)

Article Optics

Nanolasers grown on silicon

Roger Chen et al.

NATURE PHOTONICS (2011)

Article Physics, Applied

High depth resolution analysis of Si/SiGe multilayers with the atom probe

Sebastian Koelling et al.

APPLIED PHYSICS LETTERS (2009)

Article Chemistry, Physical

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

Fang Qian et al.

NATURE MATERIALS (2008)

Article Multidisciplinary Sciences

Single-nanowire electrically driven lasers

XF Duan et al.

NATURE (2003)

Article Chemistry, Physical

Single gallium nitride nanowire lasers

JC Johnson et al.

NATURE MATERIALS (2002)

Article Multidisciplinary Sciences

Room-temperature ultraviolet nanowire nanolasers

MH Huang et al.

SCIENCE (2001)