Related references
Note: Only part of the references are listed.Sputter Epitaxy of AlN and GaN on Si(111)
Armin Dadgar et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2023)
Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing
Kanako Shojiki et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2023)
Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces
Quantong Li et al.
CRYSTALS (2023)
Self-Induced Core-Shell InAlN Nanorods: Formation and Stability Unraveled by Ab Initio Simulations
Manoel Alves Machado Filho et al.
ACS NANOSCIENCE AU (2023)
Improvement of Crystal Quality of AlN Films with Different Polarities by Annealing at High Temperature
Yang Yue et al.
MICROMACHINES (2022)
Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer
Pepen Arifin et al.
COATINGS (2022)
Domain epitaxial growth of Ta3N5 film on c-plane sapphire substrate
Jui-Che Chang et al.
SURFACE & COATINGS TECHNOLOGY (2022)
Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition
Cao Phuong Thao et al.
COATINGS (2020)
Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy
Aditya Prabaswara et al.
APPLIED SCIENCES-BASEL (2020)
Glancing Angle Deposition and Growth Mechanism of Inclined AlN Nanostructures Using Reactive Magnetron Sputtering
Samiran Bairagi et al.
COATINGS (2020)
The effect of magnetic field configuration on structural and mechanical properties of TiN coatings deposited by HiPIMS and dcMS
Anas Ghailane et al.
SURFACE & COATINGS TECHNOLOGY (2020)
Influence of chamber pressure on the crystal quality of homo-epitaxial GaN grown by radical-enhanced MOCVD (REMOCVD)
Frank Wilson Amalraj et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Design and growth of GaN-based blue and green laser diodes
Aiqin Tian et al.
SCIENCE CHINA-MATERIALS (2020)
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
A. S. Augustine Fletcher et al.
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS (2019)
Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition
Atsushi Kobayashi et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)
Improvement mechanism of sputtered AlN films by high-temperature annealing
Shiyu Xiao et al.
JOURNAL OF CRYSTAL GROWTH (2018)
Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates
Elena Alexandra Serban et al.
ENERGIES (2017)
In situ assessment of target poisoning evolution in magnetron sputtering
Muhammad Arif et al.
SURFACE & COATINGS TECHNOLOGY (2017)
Benefits of energetic ion bombardment for tailoring stress and microstructural evolution during growth of Cu thin films
Felipe Cemin et al.
ACTA MATERIALIA (2017)
A unified treatment of self-sputtering, process gas recycling, and runaway for high power impulse sputtering magnetrons
N. Brenning et al.
PLASMA SOURCES SCIENCE & TECHNOLOGY (2017)
Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching
Akhilesh Pandey et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2016)
HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™
M. Iwinska et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Structural properties of GaN layers grown on Al2O3 (0001) and GaN/Al2O3 template by reactive radio-frequency magnetron sputter epitaxy
Hiroyuki Shinoda et al.
VACUUM (2016)
Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition
Jianpeng Cheng et al.
SCIENTIFIC REPORTS (2016)
Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20 V
Thi Tran Anh Tuan et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2015)
Curved-Lattice Epitaxial Growth of InxAl1-xN Nanospirals with Tailored Chirality
Ching-Lien Hsiao et al.
NANO LETTERS (2015)
Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
Jeong Woo Shon et al.
SCIENTIFIC REPORTS (2014)
X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN
M. Bobea et al.
JOURNAL OF APPLIED PHYSICS (2013)
Room-temperature heteroepitaxy of single-phase Al1-xInxN films with full composition range on isostructural wurtzite templates
Ching-Lien Hsiao et al.
THIN SOLID FILMS (2012)
Highly c-axis oriented AlN layers grown on c-plane sapphire substrates by radio-frequency sputter epitaxy at 1080 °C
Nobuki Mutsukura et al.
THIN SOLID FILMS (2012)
Influence of sputter power and N2 gas flow ratio on crystalline quality of AlN layers deposited at 823 K by RF reactive sputtering
Tomoyuki Kumada et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 (2012)
Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
M. Junaid et al.
APPLIED PHYSICS LETTERS (2011)
Interpretation of the two-components observed in high resolution X-ray diffraction ω scan peaks for mosaic ZnO thin films grown on c-sapphire substrates using pulsed laser deposition
O. Durand et al.
THIN SOLID FILMS (2011)
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee et al.
APPLIED PHYSICS LETTERS (2005)
Fundamental understanding and modeling of reactive sputtering processes
S Berg et al.
THIN SOLID FILMS (2005)
A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate
T Wang et al.
JOURNAL OF CRYSTAL GROWTH (2000)