Structural, optical and electrical properties of ZnO-InN quaternary compound films

The ZnO-InN compound films were fabricated via both RF and DC sputtering by using indium and zinc metal target, where N2O and N2 gases were employed as the sputtering gas. The optical band gap was continuously tuned from 1.9 to 3.4 eV by precisely tailoring the chemical composition of the compound film. Both optical band gap and lattice spacing can be described by Vegard rule well. The carrier density can be adjusted up to 6.20 x 1020 cm-3 by varying the chemical composition of ZnO-InN compound. When the carrier density exceeds & SIM;1020 cm-3, the ZnO-InN compound films show the characteristics of degenerated semiconductor. Our experiments also reveal that the grain boundary scattering dominates carrier transport for ZnO-InN compound films with carrier density below 1020 cm-3.

Automated summary

The ZnO-InN compound films were fabricated through both RF and DC sputtering, using indium and zinc metal target and N2O and N2 gases as the sputtering gas. The optical band gap was continuously tuned by precisely adjusting the chemical composition of the compound film. The carrier density of the ZnO-InN compound can be adjusted by varying the chemical composition, and when exceeding a certain threshold, the film exhibits degenerated semiconductor characteristics. Grain boundary scattering dominates carrier transport in films with carrier density below the threshold.