Effect of defects in capacitance-voltage measurement of doping profiles in Ga2O3

Article Materials Science, Multidisciplinary

Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method

Y. Safak Asar et al.

Summary: A diamond-like carbon film (DLC) was deposited on a p-Si substrate to fabricate Al/DLC/p-Si/Au metal/interlayer/semiconductor (MIS) Schottky diodes (SDs). Analysis using SEM and XPS methods revealed that the DLC interfacial layer completely coated the silicon surface with spherical particles and islets. Measurements showed that the DLC film had outstanding characteristics as an interlayer, reducing surface states and other dislocations in SDs.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2023)

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Article Nanoscience & Nanotechnology

β-Gallium oxide power electronics

Andrew J. Green et al.

Summary: Gallium Oxide has become a leading ultra-wide band gap semiconductor technology due to its favorable material properties. This roadmap presents the current state-of-the-art and future challenges in the field, aiming to enhance device performance and design efficient microelectronic systems.

APL MATERIALS (2022)

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Article Engineering, Electrical & Electronic

Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy

Jiaxiang Chen et al.

Summary: The emission kinetics of a single-electron trap in Sn-doped Ga2O3 crystals were studied, and it was found that the emission process accelerated exponentially between 200 K and 350 K. The emission time constant of the trap slightly decreased in the low-electric-field regime, but with further enhancement of the electric field, the emission rate was accurately modeled by the Poole-Frenkel effect.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2021)

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Article Physics, Applied