Journal
THIN SOLID FILMS
Volume 780, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2023.139967
Keywords
Polarization; Ferroelectric thin film; Silicon tin zinc oxide; Current density; Buffer layer; Strontium titanate; Strontium Titanate and silicon doped tin zinc; oxide
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The pulsed laser deposition (PLD) technique is used to fabricate Si-SnZnO3 thin films on MgO substrate, as well as on STO buffer layer. The influence of the STO buffer layer on the ferroelectric behavior of Si-SnZnO3 films is investigated. The structure, morphology, film thickness, resistivity, carrier mobility, and ferroelectricity parameters of the Si-SnZnO3 films are studied.
The pulsed laser deposition (PLD) technique is employed in this research to fabricate thin films of Silicon-doped Tin Zinc Oxide (Si-SnZnO3) on a Magnesium Oxide (MgO) substrate. Additionally, Si-SnZnO3 thin films are grown on a Strontium Titanate (SrTiO3 or STO) buffer layer with a thickness of 60 nm, which is deposited on the MgO substrate. The target materials used in the PLD technique, Si-SnZnO3, and SrTiO3, are prepared using the solid-state technique. The current study aims to explore the influence of the STO buffer layer on the ferroelectric behavior of the Si-SnZnO3-grown film. Accordingly, the structure, morphology, and film thickness of Si0.5Sn0.5ZnO3/MgO and Si0.5Sn0.5ZnO3/STO/MgO samples are investigated using X-Ray Diffraction and Scanning Electron Microscope techniques respectively. Furthermore, the uniformity of different film thicknesses grown on STO/MgO is investigated using Atomic Force Microscopy. Both the resistivity and the carrier mobility for Si0.5Sn0.5ZnO3 /MgO sample are 3.22 x 103 & OHM;.m, and 7.35 x 107 m/(V & BULL;s) (semiconductor), whereas there are 4.31 x 103 & OHM;.m, and 63.1 m/(V & BULL;s) (insulator) for the Si0.5Sn0.5ZnO3/STO/MgO substrates, respectively. The Polarization-Electric Field hysteresis loops of different film thicknesses show Lossy capacitor response and Nonlinear ferroelectric response for Si0.5Sn0.5ZnO3/MgO, and Si0.5Sn0.5ZnO3/STO/MgO, correspondingly. Moreover, the ferroelectricity parameters of the Si0.5Sn0.5ZnO3 films deposited on the STO/MgO were improved by an order of magnitude compared to the thin film on the MgO substrate. The obtained results indicate that Si0.5Sn0.5ZnO3/ STO/MgO configuration could be suitable for Ferroelectric Random Access Memory applications.
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