Poly 3-methylthiophene based memristor device for neuromorphic computing

Von Neumann computing-based memory has reached its limit, it is incapable of performing two tasks simultaneously, i.e. data storage and computation. Artificial neuromorphic computing (ANC) inspired by biological neural network is the next generation memory technology, which is based on a memristor device. Study of memristor is a hot topic in electronic research as it exhibits multifunctionality. Electrochemically synthesized doped Poly 3-methylthiophene (P3MT) based single layer memristor device showcases neuromorphic computing applications when resistance is enhanced to insulating state, by the process of de-doping. Morphological/ structural deformation created by the process of de-doping on the surface of active layer is responsible for multifunctionality such as controllable negative differential resistance (NDR), unipolar resistive-switching (RS), multi-level RS (analog memory) and bio-inspired artificial synapse in SS/P3MT/Ag device geometry.

Automated summary

Von Neumann computing-based memory cannot perform data storage and computation simultaneously, leading to the development of artificial neuromorphic computing (ANC) based on memristor devices, which exhibit multifunctionality. A doped Poly 3-methylthiophene (P3MT) based single layer memristor device, synthesized electrochemically, demonstrates applications in neuromorphic computing when resistance is enhanced to an insulating state by de-doping. The de-doping process induces morphological/structural deformation on the active layer surface, enabling controllable negative differential resistance (NDR), unipolar resistive-switching (RS), multi-level RS (analog memory), and bio-inspired artificial synapse.