Journal
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
Volume 36, Issue 10, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6668/aceeba
Keywords
BiS2-based superconductors; layered superconductor; chemical pressure; high pressure; charge density wave; narrow gap semiconductor
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We synthesized a new compound La2O2Bi3PbS6 with a crystal structure similar to that of La2O2Bi3AgS6 superconductor or La2O2Bi2Pb2S6 insulator. The La2O2Bi3PbS6 sample exhibited narrow gap semiconductor transport behavior and a metallic-like to insulator transition with increasing Pb substitution. External pressure was applied and pressure-induced superconductivity was observed in the La2O2Bi3PbS6 compound.
We report synthesis, characterization, and physical properties of layered bismuth-sulfide compounds La2O2Bi3-x Pb1+x S6. We synthesized a new La2O2Bi3PbS6 compound, whose crystal structure is similar to those of the La2O2Bi3AgS6 superconductor or La2O2Bi2Pb2S6 (insulator) with a four-layer-type conducting layer. The crystal structure of La2O2Bi3PbS6 is characterized in a tetragonal P4/nmm space group, and the lattice parameters are a = 4.084(1) & ANGS; and c = 19.71(2) & ANGS;. The obtained La2O2Bi3PbS6 sample exhibits narrow gap semiconductor (metallic-like) transport behavior with an anomaly near the 160 K. A metallic-like to insulator transition has been observed through Pb substitution, with increasing x in La2O2Bi3-x Pb1+x S6. Furthermore, we applied external pressure for x = 0 and observed pressure-induced superconductivity. The onset of superconductivity appeared at 0.93 GPa, and the highest transition temperature was 3.1 K at 2.21 GPa.
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