Journal
SOLID-STATE ELECTRONICS
Volume 208, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2023.108743
Keywords
GaN stoichiometry; MOSc-HEMT; Etching; SIMS; HAXPES
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This study investigates the effect of inductively coupled plasma reactive ion etching (ICP-RIE) combined with atomic layer etching (ALE) on the Al2O3/GaN interface for MOSc-HEMT devices. The results show an increase of the N/Ga ratio near the interface and the presence of impurities in the etched sample.
In this work we present the effect of inductively coupled plasma reactive ion etching (ICP-RIE) combined with atomic layer etching (ALE) on the Al2O3/GaN interface for MOSc-HEMT devices. Time of flight secondary ion mass spectrometry (ToF-SIMS) and hard x-ray photoelectron spectroscopy (HAXPES) highlight an increase of the N/Ga ratio near the interface after etching. ToF-SIMS profiles also show the presence of impurities (H, C, B) at this interface. Atomic force microscopy (AFM) also illustrates a change of the GaN surface morphology for the etched sample.
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