Journal
SMALL
Volume -, Issue -, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202304173
Keywords
2D materials; floating gate; logic gates; nonvolatile memory; phototransistors
Ask authors/readers for more resources
This study presents a molybdenum disulfide (MoS2) asymmetric-dual-gate field-effect transistor (ADGFET) with independently controlled double gates, which can achieve logic function, nonvolatile memory, and tunable photoresponse. The multifunctional applications demonstrate that the ADGFET provides a feasible way to integrate logic, memory, and sensing into one device architecture.
Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D-materials-based dual-gate transistors are expected to meet these demands due to the ultra-thin body and the dangling-bond-free surface. In this work, a molybdenum disulfide (MoS2) asymmetric-dual-gate field-effect transistor (ADGFET) with an In2Se3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 106 with a low subthreshold swing of 94.3 mV dec-1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge-trapping layer, realizing nonvolatile memory (105 on/off ratio with retention time over 104 s) and six-level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W-1, benefiting from the interface coupling between the double gates. Meanwhile, the photo-memory property of ADGFET is also verified by using the varying exposure dosages-dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture. This paper presents a MoS2-based asymmetric dual-gate field-effect transistor (ADGFET) with a small top gate and a global bottom gate. Taking advantage of independent gate control and strong interaction between gates, the device demonstrates basic logic function, while enabling nonvolatile memory and tunable photoresponse. The ADGFET shows potential for high-performance and multifunctional applications in future computing architecture.image
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available