Electron beam irradiation effects on GaN/InGaN multiple quantum well structures

GaN-based semiconductors have a strong potential for applications in space systems due to their high radiation resistance. Here, we investigate the influence of 1.5 MeV electron irradiation on the structural, electrical, and optical properties of InGaN/GaN multiple quantum wells (MQWs). The results show that at lower electron fluencies, the indium content in the InGaN/GaN MQWs decreases by about 0.4% because of the ionization of valence electrons induced by electron irradiation, but at higher electron fluencies, the indium concentration increases by about 2.3% because of the appearance of indium-rich 'clusters' in the homogeneous quantum wells. Moreover, the fitted activation energy of the irradiated quantum wells increases by about 16% compared to that of the as-grown MQWs.

Automated summary

The effects of 1.5 MeV electron irradiation on the structural, electrical, and optical properties of InGaN/GaN multiple quantum wells were investigated. It was found that at lower electron fluencies, the indium content in the quantum wells decreased due to ionization of valence electrons, while at higher fluencies, there was an increase in indium concentration due to the appearance of indium-rich clusters. Additionally, the activation energy of the irradiated quantum wells increased compared to the as-grown ones.