Investigation of a minority carrier trap in a NiO/β-Ga2O3 p-n heterojunction via deep-level transient spectroscopy

The properties of a minority carrier (hole) trap in ss-Ga2O3 have been explicitly investigated using a NiO/ss-Ga2O3 p-n heterojunction. Via deep-level transient spectroscopy, the activation energy for emission (E-emi) and the hole capture cross section (sigma(p)) were derived to be 0.10 eV and 2.48 x 10(-15) cm(2), respectively. Temperature-enhanced capture and emission kinetics were revealed by the decrease in the capture time constant (Tau(c)) and emission time constant (Tau(e)). Moreover, it was determined that the emission process of the minority carrier trap is independent of the electric field. Taking carrier recombination into account, a corrected trap concentration (N-Ta) of 2.73 x 10(15) cm(-3) was extracted, together with an electron capture cross section (sigma(n)) of 1.42 x 10(-18) cm(2). This study provides a foundation for the comprehension of trap properties in ss-Ga2O3, which is crucial for overcoming self-trapped hole effects when obtaining p-type ss-Ga2O3 materials and performance enhancement of ss-Ga2O3-based power devices.

Automated summary

The properties of a minority carrier (hole) trap in ss-Ga2O3 have been investigated using a NiO/ss-Ga2O3 p-n heterojunction. The activation energy for emission and the hole capture cross section were determined to be 0.10 eV and 2.48 x 10(-15) cm(2), respectively. Temperature-enhanced capture and emission kinetics were observed, and it was found that the emission process of the minority carrier trap is independent of the electric field.