Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer

In this study, we investigated the effect of inserting a 1 nm thick AlN thin-film layer in the drift layer of a GaN-on-Si Schottky barrier diode to improve the reverse-bias breakdown voltage. The breakdown voltage was significantly improved from 258 V (without an AlN layer) to 338 V (with an AlN layer placed at the bottom of the drift layer), indicating that the AlN thin layer played an important role in the breakdown voltage characteristics. Furthermore, x-ray diffraction measurements and stress evaluations indicate that the AlN thin-film layer inserted at the bottom of the drift layer can significantly reduce the film stress and improve the breakdown voltage of the device.

Automated summary

In this study, the effect of inserting a 1 nm thick AlN thin-film layer in the drift layer of a GaN-on-Si Schottky barrier diode was investigated to improve the reverse-bias breakdown voltage. The results showed that the breakdown voltage was significantly improved from 258 V (without an AlN layer) to 338 V (with an AlN layer placed at the bottom of the drift layer), indicating the important role of the AlN thin layer in the breakdown voltage characteristics. Furthermore, x-ray diffraction measurements and stress evaluations revealed that the AlN thin-film layer inserted at the bottom of the drift layer can significantly reduce film stress and improve the breakdown voltage of the device.