4.6 Article

High energy ?-rays inelastic scattering studies and DFT strategies of divalent high-Z perovskites EuTMO3 (TM = Ti and Zr)

Journal

RADIATION PHYSICS AND CHEMISTRY
Volume 208, Issue -, Pages -

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.radphyschem.2023.110871

Keywords

X-ray scattering; Density functional theory; Electronic structure; Rare earth oxides

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This study measured the electron momentum densities (EMDs) of divalent high-Z perovskites EuTiO3 and EuZrO3 using a 20 Ci 137Cs Compton spectrometer. Theoretical directional and isotropic Compton profiles (CPs) were deduced for both perovskites using a linear combination of atomic orbitals (LCAO) scheme with density functional theory (DFT). The WC1LYP scheme was identified as a better prescription for both perovskites. Moreover, the bonding nature and electronic properties of these compounds were analyzed.
Electron momentum densities (EMDs) of divalent high-Z perovskites EuTiO3 and EuZrO3 have been measured using 20 Ci 137Cs Compton spectrometer at 0.34 a.u. (momentum resolution). Theoretical directional and isotropic Compton profiles (CPs) for both the perovskites have been deduced using linear combination of atomic orbitals (LCAO) scheme with density functional theory (DFT). The DFT approximation dependent local density and generalized gradient approximations (GGA) along with second order GGA (SOGGA) and hybrid WC1LYP are considered in the present work. While validating the approximation for exchange and correlation energies using experimental CPs, the WC1LYP scheme has been identified as a better prescription for both the perovskites. To scrutinize the nature of bonding, we have calculated the Mulliken's populations (MP) and also scaled the experimental EMDs on equal-valence-electron-density, which explicitly show that EuTiO3 is more ionic than the EuZrO3. Going beyond the CPs, the electronic properties like energy bands and density of states (DOS) have also been enumerated using full potential linearized augmented plane wave (FP-LAPW) with GGA and GGA+Hubbard correction (U). Both the compounds show semiconducting behaviour with FP-LAPW-GGA+U scheme.

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