Study of Spectral Responsivity of Au@In2O3 Nanoparticles via Laser Ablation Deposited on Porous Silicon

In this study, the properties of the porous silicon (PS) photodetector were improved by depositing Au@In2O3 (core-shell) nanoparticles on the surface of PS. The Au@In2O3 NPs were prepared using the pulsed laser ablation in liquid (PLAL) technique at different laser energies of 500, 700, and 900 mJ, using a Nd:YAG laser with a wavelength of 1064 nm. The PS was prepared using the electrochemical etching (ECE) method, with an etching current density of 20 mA/cm(2), an etching time of 15 min, and a hydrofluoric acid concentration of 25%. Structural, morphological, optical, and electrical measurements of the PS, Au@In2O3 NPs, and Au@In2O3 NPs/PS were conducted using the X-ray diffraction (XRD) test, field-emission scanning electron microscopy (FE-SEM) analysis, photoluminescence (PL), and UV-vis spectroscopy showed the highest peak of absorbance at 327-385 nm, and the photoluminescence (PL) peak of Au@In2O3 NPs was in the visible range show broad band and splitting for 399.5 nm for In2O3 NPs and 469 nm for Au NPs, while the PS peak was at about 561.8 nm. As a result, the photodetectors device system exhibited high responsivity (R-lambda) and quantum efficiency in the visible area, the higher responsivity of the Au@In2O3 NPs/PS photodetector was measured as 0.1450 A/W for specimens prepared at a laser energy of 500 mJ/pulse.

Automated summary

In this study, the properties of a porous silicon photodetector were enhanced by depositing Au@In2O3 nanoparticles on its surface. The resulting device showed high responsivity and quantum efficiency in the visible range.