4.5 Article

Theoretical study of electron compressibility in semiconductor quantum wires

Journal

PHYSICS LETTERS A
Volume 489, Issue -, Pages -

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ELSEVIER
DOI: 10.1016/j.physleta.2023.129151

Keywords

Electron compressibility; 2-dimensional; Quantum well; Spin polarization; External magnetic

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In this study, the compressibility of electrons as a function of external magnetic fields, temperature, and carrier density was calculated in parabolic lateral barrier quantum wires. The results show a significant difference in compressibility between low-temperature and high-temperature regions at external magnetic fields. These findings help clarify the impact of Coulomb interaction and energy on the compressibility of semiconductors across a wide range of density, temperature, and external magnetic fields.
The compressibility was calculated of electrons as a function of external magnetic, temperature and carrier density in the parabolic lateral barrier quantum wires (QWRs). The compressibility found by using Seitz's theorem in which electron self-energy is calculated within the random-phase approximation. All results for GaAs QWRs show that a large difference between the compressibility in low-and high-temperature region at external magnetic fields. These results can help clarify how the Coulomb interaction and exchange, correlation energy affect the compressibility of the semiconductor across a wide range of density, temperature, and external magnetic.

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