4.4 Article

Dual-Hole-Transport-Layer-Facilitated Efficient Perovskite Light-Emitting Diode

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202300247

Keywords

brightness; carrier injection; current efficiency; perovskite light-emitting diodes (LEDs); turn-on voltage

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The study presents a simple method for fabricating green perovskite light-emitting diodes (PeLEDs) with improved charge balance. The dual hole-transport layers (HTLs) used in the devices result in higher radiative recombination in the emissive layer (EML), leading to enhanced brightness and current efficiency. The achievement is attributed to the well-matched energy levels and reduced charge injection barrier.
The improved luminescence and colour purity of solution-processable perovskite materials have positioned them as promising candidates for advanced lighting technologies. Herein, a simple method is presented for fabricating dual hole-transport layers (HTLs) of green perovskite light-emitting diodes (PeLEDs), for improved charge balance in the emissive layer (EML). With well-matched energy levels, and lowered charge injection barrier of the transport layers, maximum radiative recombination in the EML can be obtained. The varying highest occupied molecular orbital (HOMO) levels of the HTLs used in the device are in alignment with the work function of the fluorine-doped tin oxide and HOMO of the EML. The poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/N,N '-bis(naphthalen-1-yl)-N,N '-bis(phenyl)-2,2 '-dimethylbenzidine (PEDOT:PSS/NPD)-based PeLED device shows outstanding performance with a maximum brightness of 19625 cd m-2, highest current efficiency of 19.2 cd A-1, and turn-on voltage of 3.8 V among the all HTL combinations. These improvements are attributed to the well-matched HOMO of NPD and PEDOT:PSS, with both the anode and EML allowing improved hole injection and charge balance. Electroluminescence supports the coordinates (0.22, 0.74) for pure green emission provided by the Commission Internationale de I'Eclairage. Perovskite films fabricated on top of PEDOT:PSS/NPD have the best film morphology and crystallinity with the fewest pinholes enabling improved charge transport. In this study, a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/N,N '-bis(naphthalen-1-yl)-N,N '-bis(phenyl)-2,2 '-dimethylbenzidine dual-HTL method is used to modify the charge injection barrier between the hole-transport layer (HTL) and perovskite interface of the light-emitting diode device, enhancing the morphology and photo-physical properties of the perovskite layer to obtain highest brightness of 19625 cd m-2 and luminescent efficiency of 19.2 cd A-1 in the champion device.image (c) 2023 WILEY-VCH GmbH

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