Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 151, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.physe.2023.115740
Keywords
Terahertz; Metamaterial; Filter; Switch; Polarization-sensitive; Refractive index sensor
Ask authors/readers for more resources
We propose a design of a tunable terahertz (THz) metamaterial (TTM) with single- and dual-band filtering, polarization-dependent, and switching characteristics. The device is composed of electric split-ring resonators (eSRR) with I-shaped and T-shaped structures on a silicon-on-insulator (SOI) substrate. By controlling the displacement of the middle I-shaped metamaterial along the y-direction and z-direction using electrostatic force, the electromagnetic responses of the TTM can be controlled. The TTM exhibits robustness to the displacement of the I-shaped metamaterial along the y-direction and shows switching characteristics between single and dual resonances in TM mode by moving the I-shaped metamaterial along the z-direction.
We present a design of tunable terahertz (THz) metamaterial (TTM) with single- and dual-band filtering, polarization-dependent, and switching characteristics. The proposed device is composed of electric split-ring resonator (eSRR) with I-shaped and T-shaped structures on silicon on insulator (SOI) substrate. By exploiting electrostatic force to change the displacement of the middle I-shaped metamaterial along the y-direction and zdirection, the electromagnetic responses of TTM can be controlled. TTM exhibits resonance-insensitive to the displacement of I-shaped metamaterial along the y-direction. By moving the I-shaped metamaterial along the zdirection, TTM shows the switching characteristic between single-to dual-resonance in TM mode, and the free spectrum ranges (FSR) could be bi-directionally narrowed 0.672 THz and broadened 0.744 THz in TE and TM modes, respectively. To further enhance the flexibility of the TTM device, it is exposed to an ambient environment with different refraction index for high-efficiency environmental sensors. The correlation coefficient is over 0.987. These results open an avenue to be potentially used for tunable detector, sensor, and switch in the THzwave optoelectronics applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available