The effect of charged defects on the local effective piezo-electric response for the polycrystalline lead-free BCZT bulk ceramic versus thin film

The current work presents the d(33,eff) evaluation for Ba0 center dot 9Ca0 center dot 1Ti0 center dot 9Zr0 center dot 1O3 (BCZT) thin film (TF) prepared by RF magnetron sputtering over Pt (111) substrate by switching spectroscopy piezo-response force microscopy (SS-PFM). Our results reveal an d(33.eff) approximately of 70 p.m. V-1. This value was compared with the bulk ceramic counterpart (d(33.eff) = 72 p.m. V 1), and it is comparable with other similar lead-free TF compositions. To understand the d(33.eff) value for the TF, the influence of mixed-valence Ti (Ti3+ and Ti4+) states and oxygen chemical ions is elucidated by x-ray photoelectron spectroscopy (XPS). The component analysis for Ti 2p and O 1s XPS regions confirmed a less presence of oxygen O- ions in the TF. X-ray diffraction corroborates the tetragonal perovskite structure with P4mm space group, which is desired to obtain ferroelectric properties. The good piezo-response for the TF is very promising as a storage device for the electronic industry.

Automated summary

The d(33,eff) value of BCZT thin film prepared by RF magnetron sputtering was measured to be approximately 70 p.m. V-1, which is comparable to other lead-free thin film compositions. XPS analysis revealed the influence of mixed-valence Ti states and oxygen chemical ions on the d(33,eff) value. The perovskite structure and good piezo-response of the TF make it a promising storage device for the electronic industry.