Journal
PHYSICA B-CONDENSED MATTER
Volume 673, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.physb.2023.415473
Keywords
A. Double perovskites; B. Solid state reaction; C. Rietveld refinement; D. Magnetic properties
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A polycrystalline double perovskite La2CoMnO6 sample was prepared and its structural, dielectric and magnetic properties were investigated. The sample exhibited complex structures and magnetic behavior, and showed good conductivity and dielectric performance. Its multi-domain magnetic structure suggests its suitability for memory device applications.
Polycrystalline double perovskite La2CoMnO6 sample was prepared via solid state reaction route and its structural, dielectric and magnetic properties were investigated. XRD confirmed the phase formation without any impurity. Rietveld refinement analysis suggested the presence of monoclinic (P21/n, ordered) as well as rhombohedral and orthorhombic (R3c & Pbnm, disordered) structures. Microstructural analysis using FESEM confirmed that average grain size lies in micrometer range. Dielectric constant (log epsilon ') and loss tangent (tan delta) both exhibited large values at lower frequencies as well as in higher temperature range. Nyquist impedance plot proposed NTCR (negative temperature coefficient of resistance) nature of double perovskite sample. DC conductivity showed increasing trend with increase in temperature and also, the conductivity is of the order of 10-2 S/m, which represent semiconducting behavior of prepared sample. Also, the analysis suggested the co-existence of thermal activation (TA), small polaron hopping (SPH) and variable range hopping (VRH) conduction mechanisms. Temperature dependent magnetic measurements (M-T) suggested that sample exhibit single magnetic transition at 226 K. Field dependent magnetic measurements (M-H) confirmed the ferromagnetic nature of the prepared sample. M-H loop is not well saturated even at 60 kOe which suggested the presence of anti-site disorder. Multi-domain magnetic structure of the prepared sample suggests its suitability for memory device applications.
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