4.5 Article

The unexpected magnetism in 2D group-IV-doped GaN for spintronic applications

Related references

Note: Only part of the references are listed.
Article Chemistry, Physical

Ferromagnetic GdX (X = Cl, Br) Monolayers with Large Perpendicular Magnetic Anisotropy and High Curie Temperature

Yuwan Wang et al.

Summary: The electronic and magnetic properties of GdX (X = Cl and Br) monolayers and GdCl/GdBr heterojunctions were investigated through theoretical calculations. Both GdCl and GdBr monolayers exhibit high Curie temperatures and large perpendicular magnetic anisotropy, and possess topological properties and spin-orbit-induced energy band reversion. Two stable stacking configurations were found for the GdCl/GdBr bilayer heterojunction, maintaining the high Curie temperatures and topological properties. These findings highlight the potential of GdCl and GdBr monolayers in nanoscale spintronic devices.

JOURNAL OF PHYSICAL CHEMISTRY C (2023)

Article Physics, Multidisciplinary

The Theoretical Study of Unexpected Magnetism in 2D Si-Doped AlN

Wenhui Wan et al.

Summary: In this study, the structural and magnetic properties of Si-doped bulk and 2D AlN were systematically investigated. It was found that Si atoms prefer to substitute Al atoms in both bulk and 2D AlN, and their behavior differs under different conditions. The results also suggest that 2D AlN doped with group IV elements has potential applications in spintronic devices.

FRONTIERS IN PHYSICS (2022)

Article Chemistry, Multidisciplinary

Non-magnetic adsorbent functionalized magnetism and spin filtering in a two-dimensional GaN monolayer

Sandeep Yadav et al.

Summary: Exotic properties were predicted by adsorbing non-magnetic Si atoms on a 2D-GaN monolayer, including spin filtering, high magnetism, and continuous electromagnetic radiation emission. The study of the structural, electronic, magnetic, and optical properties of Si-adsorbed 2D-GaN monolayers showed strong absorption in the deep ultraviolet region and continuous absorption from far infrared to visible light region, which could be useful for the development of light-emitting devices and applications such as sterilization and water purification.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2022)

Article Chemistry, Physical

On the Origin of d0 Magnetism in Transparent Metal Oxide Nanocrystals

Chenwei Zhang et al.

Summary: The study reveals band splitting in ZnO and SnO2 nanocrystals, induced by localized doublet and triplet ground states, which are associated with oxygen vacancies. This suggests that carrier polarization in metal oxide nanocrystals can be tuned by controlling native defect formation, potentially playing a role in generating ferromagnetism.

JOURNAL OF PHYSICAL CHEMISTRY C (2021)

Article Chemistry, Physical

Valley polarization, magnetic anisotropy and Dzyaloshinskii-Moriya interaction of two-dimensional graphene/Janus 2H-VSeX (X = S, Te) heterostructures

Shengmei Qi et al.

Summary: The electronic structure and magnetic properties of 2D Gr/VSeX heterostructures were systematically investigated using density functional theory. It was found that the electronic structure and magnetic properties of Gr/VSeTe heterostructure can be modulated by external electric field, interlayer distance, and in-plane biaxial strain, with the in-plane biaxial strain effects on DMI being more pronounced. By decreasing the interlayer distance of Gr/VSeTe heterostructure, the valley splitting of graphene can be effectively enhanced.

CARBON (2021)

Article Materials Science, Multidisciplinary

Role of exchange splitting and ligand-field splitting in tuning the magnetic anisotropy of an individual iridium atom on TaS2 substrate

Shiming Yan et al.

Summary: In this study, the magnetic anisotropy (MA) of single-atom iridium (Ir) on a TaS2 substrate was investigated using first-principles calculation. It was found that the MA can be tuned by strain through exchange splitting and ligand-field splitting, leading to changes in the strength and direction of the MA. This study provides a way to control the MA of a single-atom magnet on a 2D transition metal dichalcogenide substrate.

PHYSICAL REVIEW B (2021)

Proceedings Paper Materials Science, Multidisciplinary

Gallium Nitride -Based Photodiode: A review

Haneen D. Jabbar et al.

Summary: This paper introduces GaN-based photodiodes for detecting multispectral ranges with high performance, high responsivity, high speed, and low cost. It summarizes previous works and showcases the potential of using different growth methods on various substrate materials to fabricate photodiodes.

MATERIALS TODAY-PROCEEDINGS (2021)

Article Materials Science, Multidisciplinary

Revisiting the structural, electronic and photocatalytic properties of Ti and Zr based perovskites with meta-GGA functionals of DFT

Waqas Zulfiqar et al.

Summary: A combination of SCAN and mBJ-LDA functionals accurately computes the properties of Ti and Zr based perovskite oxides, showing improved optoelectronic properties for large band gap materials suitable for photocatalysis, compared to semi-local functionals of DFT.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

Article Physics, Condensed Matter

Computational Prediction of the Low-Temperature Ferromagnetic Semiconducting 2D SiN Monolayer

Nikolay Tkachenko et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)

Article Nanoscience & Nanotechnology

Spin-Dependent Electronic Structure and Magnetic Anisotropy of 2D Ferromagnetic Janus Cr2I3X3 (X = Br, Cl) Monolayers

Fang Zhang et al.

ADVANCED ELECTRONIC MATERIALS (2020)

Editorial Material Chemistry, Physical

Magnetism in d0 oxides

J. M. D. Coey

NATURE MATERIALS (2019)

Article Physics, Condensed Matter

Monolayer GaN functionalized with alkali metal and alkaline earth metal atoms: A first-principles study

Keat Hoe Yeoh et al.

SUPERLATTICES AND MICROSTRUCTURES (2019)

Article Physics, Condensed Matter

Tunable magnetism in defective MoS2 monolayer with nonmetal atoms adsorption

Zijian Gao et al.

SUPERLATTICES AND MICROSTRUCTURES (2019)

Article Materials Science, Multidisciplinary

First-principles study on electromagnetic properties of Mn-doped GaN

Xingxiang Ruan et al.

FERROELECTRICS (2019)

Article Chemistry, Multidisciplinary

Repairing the N-vacancy in an InN monolayer using NO molecules: a first-principles study

Hao Cui et al.

NANOSCALE ADVANCES (2019)

Article Chemistry, Physical

Vacancy charged defects in two-dimensional GaN

Roberto Gonzalez et al.

APPLIED SURFACE SCIENCE (2018)

Article Chemistry, Physical

Magnetism in non-metal atoms adsorbed graphene-like gallium nitride monolayers

Wencheng Tang et al.

APPLIED SURFACE SCIENCE (2018)

Article Nanoscience & Nanotechnology

Electronic and magnetic properties of SnS2 monolayer doped with non-magnetic elements

Wen-Zhi Xiao et al.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2018)

Article Chemistry, Physical

Chemical and substitutional doping, and anti-site and vacancy formation in monolayer AlN and GaN

Yelda Kadioglu et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2018)

Article Materials Science, Multidisciplinary

Magnetism investigation of GaN monolayer doped with group VIII B transition metals

Jiabin Li et al.

JOURNAL OF MATERIALS SCIENCE (2018)

Article Multidisciplinary Sciences

Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals

Cheng Gong et al.

NATURE (2017)

Article Physics, Condensed Matter

A comparative study on magnetic properties of Mo doped AlN, GaN and InN monolayers from first-principles

Gang Xiao et al.

PHYSICA B-CONDENSED MATTER (2017)

Article Physics, Condensed Matter

Point defects and composition in hexagonal group-III nitride monolayers: A first-principles calculation

Han Gao et al.

SUPERLATTICES AND MICROSTRUCTURES (2017)

Article Physics, Applied

Exotic d0 magnetism in partial hydrogenated silicene

Weiwei Ju et al.

APPLIED PHYSICS LETTERS (2016)

Article Chemistry, Multidisciplinary

Tuning magnetism of monolayer GaN by vacancy and nonmagnetic chemical doping

Qian Zhao et al.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2016)

News Item Chemistry, Physical

Two-dimensional gallium nitride

Nikhil A. Koratkar

NATURE MATERIALS (2016)

Article Chemistry, Physical

Two-dimensional gallium nitride realized via graphene encapsulation

Zakaria Y. Al Balushi et al.

NATURE MATERIALS (2016)

Article Computer Science, Interdisciplinary Applications

Enhanced ferromagnetic properties of Cu doped two-dimensional GaN monolayer

Fayyaz Hussain et al.

INTERNATIONAL JOURNAL OF MODERN PHYSICS C (2015)

Article Materials Science, Multidisciplinary

Exploring d0 magnetism in doped SnO2-a first principles DFT study

Brahmananda Chakraborty et al.

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2015)

Article Chemistry, Physical

Chemical Functionalization of GaN Mono layer by Adatom Adsorption

Yuewen Mu

JOURNAL OF PHYSICAL CHEMISTRY C (2015)

Article Chemistry, Multidisciplinary

Effect of Si doping on the electronic properties of BN monolayer

Sanjeev K. Gupta et al.

NANOSCALE (2014)

Article Physics, Applied

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

S. Fritze et al.

APPLIED PHYSICS LETTERS (2012)

Article Physics, Applied

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

Basanta Roul et al.

APPLIED PHYSICS LETTERS (2011)

Article Physics, Applied

Band gap engineering of wurtzite and zinc-blende GaN/AlN superlattices from first principles

X. Y. Cui et al.

JOURNAL OF APPLIED PHYSICS (2010)

Review Physics, Multidisciplinary

Theory of ferromagnetic (III,Mn)V semiconductors

T. Jungwirth et al.

REVIEWS OF MODERN PHYSICS (2006)

Article Physics, Multidisciplinary

Nitrogen vacancies as major point defects in gallium nitride

M. G. Ganchenkova et al.

PHYSICAL REVIEW LETTERS (2006)

Article Crystallography

n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy

PR Hageman et al.

JOURNAL OF CRYSTAL GROWTH (2004)

Article Chemistry, Physical

Hybrid functionals based on a screened Coulomb potential

J Heyd et al.

JOURNAL OF CHEMICAL PHYSICS (2003)

Article Nanoscience & Nanotechnology

Ferromagnetism in III-V and II-VI semiconductor structures

T Dietl et al.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2001)