Journal
PHYSICA B-CONDENSED MATTER
Volume 672, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.physb.2023.415458
Keywords
Semiconductor; Core/shell quantum dots; Binding energy; Stark effect; Diamagnetic susceptibility
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The electronic and optical properties of CdSe/ZnSe semiconductor core/shell quantum dots with hydrogenic donor impurity were investigated theoretically. The perturbation and variational methods were used to calculate the binding energy, photoionization cross-section, polarizability, and diamagnetic susceptibility of the excited impurity under various conditions. A significant stark shift in the binding energy was observed under the influence of an external electric field.
The electronic and optical properties of CdSe/ZnSe semiconductor core/shell quantum dots with hydrogenic donor impurity were investigated theoretically. The perturbation approach and variational method were used in calculations under Effective Mass Approximation. The considered structure is embedded in a variable polymer matrix. The binding energy (BE), photoionization cross-section, polarizability, and diamagnetic susceptibility of the excited impurity were calculated first according to the core/shell radius ratio and then under a significant external electric field and in the absence of an external electric field. A significant stark shift was observed in the BE relative to the embedded matrix element.
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