Indium and hafnium chloride modified titanium oxide thin films

Titanium oxide (TiO2) thin films were prepared by the sol-gel spin-coating technique. The in-fluences of indium (In), hafnium (Hf), and In&Hf doping on electrochemical and structural properties were investigated. The structural properties of undoped and doped TiO2 were inves-tigated using thermogravimetric/differential thermal (TG/DTA), X-ray Powder Diffraction (XRD), and atomic force microscopy (AFM). The optical properties were investigated using ultra-violet-visible (UV-Vis) spectroscopy, and band gap energies were calculated using the Tauc method from transmission measurement. The results showed that TiO2 had better electrochemical properties, and the band gap increased with In&Hf doping.

Automated summary

Titanium oxide (TiO2) thin films were prepared via the sol-gel spin-coating technique. The effects of indium (In), hafnium (Hf), and In&Hf doping on the electrochemical and structural properties of TiO2 were investigated. The structural properties were characterized using TG/DTA, XRD, and AFM, while the optical properties were studied using UV-Vis spectroscopy. It was found that TiO2 exhibited good electrochemical properties and the band gap energy increased with In&Hf doping.