Al0.1Ga0.9N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown

We report high-performance Al0.1Ga0.9N p-i-n ultraviolet (UV) avalanche photo-diodes (APDs) based on sapphire substrates with stable breakdown voltages (VBR) around 113.4 V, low dark current densities (JBR) below 9 x 10-4 A/cm2 and a high avalanche gain over 2 x 106. A two-step deposition method was employed to reduce passivation-induced plasma damage while maintaining high dielectric film quality. Consistent JBR for various mesa sizes at the VBR are demonstrated, which reveals the suppression of the surface leakage current. Uniform electroluminescence (EL) distributions during the avalanche multiplication processes are displayed, which confirms the elimination of edge breakdown. Pure bulk leakage current distributions and uniform body avalanche breakdown behaviors are observed for the first time in AlGaN APDs. The emission spectra of the EL at various current levels are also presented.

Automated summary

We report high-performance Al0.1Ga0.9N p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates. A two-step deposition method was used to reduce plasma damage while maintaining high-quality dielectric film. The devices show stable breakdown voltages, low dark current densities, and high avalanche gains. The suppression of surface leakage current and elimination of edge breakdown are confirmed through uniform electroluminescence distributions and emission spectra measurements.