Impact of cavity design on the modulation properties of a GaAs-based VCSEL

GaAs-based vertical-cavity surface-emitting lasers (VCSELs) are commonly used as light sources for optical interconnects in short-range systems. Here, we analyse the impact of the cavity Q factor and the number of quantum wells in the active region on the small-signal modulation response of a GaAs-based VCSEL. By tuning the reflectivity of the mirror it is possible to obtain flat response curves with a high -3 dB bandwidth. It is also beneficial to increase the number of quantum wells in the active region.

Automated summary

In this study, the impact of cavity Q factor and the number of quantum wells on the small-signal modulation response of GaAs-based VCSELs was analysed. By adjusting the mirror's reflectivity, it is possible to achieve flat response curves with a high -3 dB bandwidth. Increasing the number of quantum wells in the active region is also beneficial.