Large scale fabrication of GaN nanorods template and characterization of MOCVD grown InGaN/GaN quantum wells on {1010} plane of GaN nanorods

Gallium nitride (GaN) based low-dimensional optoelectronic devices offer distinct advantages over bulk counterparts owing to enhanced surface-to-volume ratio and better strain management. Among these devices, InGaN/ GaN multi-quantum wells (MQWs) based on nanostructured GaN have garnered attention due to tunable bandgap along with reduced size for its possible integration into display technology. However, to mitigate the effects of polarization induced by polar planes of GaN, such as quantum confined stark effect, researchers are exploring the growth of MQWs on non-polar planes as a practical approach to improve emission characteristics and device performance. In this work, we present the fabrication of GaN nanorods (NRs) using a two-step etching method, followed by the growth of core-shell InGaN/GaN MQWs on the exposed non-polar {1010} sidewalls of GaN NRs. Our metrological studies confirmed the successful growth of InGaN/GaN MQWs on the non-polar sidewalls of strain-relaxed core GaN NRs. Furthermore, power-dependent luminescence study showed emission characteristics with absence of polarization-induced effects. Cathodoluminescence study validated the emission characteristics of InGaN/GaN MQWs grown on the exposed sidewalls of the GaN NRs.

Automated summary

Gallium nitride (GaN) based low-dimensional optoelectronic devices, particularly InGaN/GaN multi-quantum wells (MQWs) based on nanostructured GaN, have potential applications in display technology due to their tunable bandgap and small size. Researchers are exploring the growth of MQWs on non-polar planes to mitigate polarization-induced effects and improve emission characteristics and device performance.