Chaos and multi-layer attractors in asymmetric neural networks coupled with discrete fractional memristor

This article introduces a novel model of asymmetric neural networks combined with fractional differ-ence memristors, which has both theoretical and practical implications in the rapidly evolving field of computational intelligence. The proposed model includes two types of fractional difference memristor elements: one with hyperbolic tangent memductance and the other with periodic memductance and memristor state described by sine functions. The authenticity of the constructed memristor is confirmed through fingerprint verification. The research extensively investigates the dynamics of a coupled neural network model, analyzing its stability at equilibrium states, studying bifurcation diagrams, and calculating the largest Lyapunov exponents. The results suggest that when incorporating sine memristors, the model demonstrates coexisting state variables depending on the initial conditions, revealing the emergence of multi-layer attractors. The article further demonstrates how the memristor state shifts through numerical simulations with varying memductance values. Notably, the study emphasizes the crucial role of memductance (synaptic weight) in determining the complex dynamical characteristics of neural network systems. To support the analytical results and demonstrate the chaotic response of state variables, the article includes appropriate numerical simulations. These simulations effectively validate the presented findings and provide concrete evidence of the system's chaotic behavior.(c) 2023 Elsevier Ltd. All rights reserved.

Automated summary

This article introduces a novel model of asymmetric neural networks combined with fractional difference memristors, and explores the complex dynamical characteristics of neural network systems with sine memristors. The authenticity of the constructed memristor is confirmed through fingerprint verification, and the model demonstrates coexisting state variables depending on the initial conditions when incorporating sine memristors, revealing the emergence of multi-layer attractors.