4.8 Article

A Purcell-enabled monolayer semiconductor free-space optical modulator

Journal

NATURE PHOTONICS
Volume -, Issue -, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41566-023-01250-9

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A general pathway to reduce the detrimental impact of dephasing and non-radiative decay processes in quantum devices is illustrated through photonic design of device electrodes. The design enables large Purcell enhancement, convenient electrical gating, and high modulation efficiencies.
Dephasing and non-radiative decay processes limit the performance of a wide variety of quantum devices at room temperature. Here we illustrate a general pathway to notably reduce the detrimental impact of these undesired effects through photonic design of the device electrodes. Our design facilitates a large Purcell enhancement that speeds up competing, desired radiative decay while also enabling convenient electrical gating and charge injection functions. We demonstrate the concept with a free-space optical modulator based on an atomically thin semiconductor. By engineering the plasmonic response of a nanopatterned silver gate pad, we successfully enhance the radiative decay rate of excitons in a tungsten disulfide monolayer by one order of magnitude to create record-high modulation efficiencies for this class of materials at room temperature. We experimentally observe a 10% reflectance change as well as 3 dB signal modulation, corresponding to a 20-fold enhancement compared with modulation using a suspended monolayer in vacuum. We also illustrate how dynamic control of light fields can be achieved with designer surface patterns. This research highlights the benefits of applying radiative decay engineering as a powerful tool in creating high-performance devices that complements substantial efforts to improve the quality of materials. By engineering the plasmonic response of a nanopatterned silver gate electrode, the radiative decay rate of excitons in a tungsten disulfide monolayer can be enhanced via the Purcell effect, creating high modulation efficiencies at room temperature.

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