Toward High-Peak-to-Valley-Ratio Graphene Resonant Tunneling Diodes

The resonant tunneling diode (RTD) is one of the very few room-temperature-operating quantum devices to date that is able to exhibit negative differential resistance. However, the reported key figure of merit, the current peak-to-valley ratio (PVR), of graphene RTDs has been up to only 3.9 at room temperature thus far. This remains very puzzling, given the atomically flat interfaces of the 2D materials. By varying the active area and perimeter of RTDs based on a graphene/hexagonal boron nitride/graphene heterostructure, we discovered that the edge doping can play a dominant role in determining the resonant tunneling, and a large area-to-perimeter ratio is necessary to obtain a high PVR. The understanding enables establishing a novel design rule and results in a PVR of 14.9, which is at least a factor of 3.8 higher than previously reported graphene RTDs. Furthermore, a theory is developed allowing extraction of the edge doping depth for the first time.

Automated summary

By varying the active area and perimeter, we found that edge doping plays a dominant role in determining resonant tunneling, and a high area-to-perimeter ratio is necessary for obtaining a high PVR. This understanding allows for the establishment of a new design rule, resulting in a PVR of 14.9, at least 3.8 times higher than previously reported graphene RTDs. Additionally, a theory is developed to extract the depth of edge doping for the first time.