4.8 Article

Shear Strain-Induced Two-Dimensional Slip Avalanches in Rhombohedral MoS2

Journal

NANO LETTERS
Volume 23, Issue 15, Pages 7228-7235

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.3c01487

Keywords

2D materials; slip avalanche; ferroelectricity; shear strain; mechanical exfoliation

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Slip avalanches are common in three-dimensional materials under shear strain and provide insights into plastic deformation, fragmentation, and earthquakes. This study provides evidence of 2D slip avalanches in exfoliated rhombohedral MoS2 triggered by shear strain near the threshold level. By using interfacial polarization, the researchers directly probed the stacking order in multilayer flakes and observed a variety of polarization domains with a power-law distribution. These findings suggest that slip avalanches can occur during the exfoliation of 2D materials and that stacking orders can be changed through shear strain. This observation has significant implications for the development of new materials and technologies, where precise control over atomic structure is crucial for optimizing properties and understanding fundamental physical phenomena.
Slip avalanches are ubiquitous phenomena occurring inthree-dimensionalmaterials under shear strain, and their study contributes immenselyto our understanding of plastic deformation, fragmentation, and earthquakes.So far, little is known about the role of shear strain in two-dimensional(2D) materials. Here we show some evidence of 2D slip avalanches inexfoliated rhombohedral MoS2, triggered by shear strainnear the threshold level. Utilizing interfacial polarization in 3R-MoS2, we directly probe the stacking order in multilayer flakesand discover a wide variety of polarization domains with sizes followinga power-law distribution. These findings suggest that slip avalanchescan occur during the exfoliation of 2D materials, and the stackingorders can be changed via shear strain. Our observation has far-reachingimplications for the development of new materials and technologies,where precise control over the atomic structure of these materialsis essential for optimizing their properties as well as for our understandingof fundamental physical phenomena.

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