4.6 Article

Expanding the Efficacy of Fingermark Enhancement Using ToF-SIMS

Journal

MOLECULES
Volume 28, Issue 15, Pages -

Publisher

MDPI
DOI: 10.3390/molecules28155687

Keywords

fingerprint; fingermark; secondary ion mass spectrometry; SIMS

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Time-of-flight secondary ion mass spectrometry (ToF-SIMS) has been shown to improve fingermark recovery compared to standard processes used by police forces. This study fills the gaps in knowledge by investigating the effectiveness of ToF-SIMS in revealing fingerprints on two common surfaces and comparing it to the standard process. The results show that ToF-SIMS enhances fingerprint ridge detail and running it in both positive and negative modes is beneficial.
Time-of-flight secondary ion mass spectrometry (ToF-SIMS) has been shown to enhance fingermark recovery compared to standard processes used by police forces, but there is no data to show how generally applicable the improvement is. Additionally, ToF-SIMS can be run in either positive or negative ion mode (or both), and there is no data on which mode of operation is most effective at revealing fingerprints. This study aims to fill these gaps by using ToF-SIMS to image fingerprints deposited on two common exhibit-type surfaces (polyethylene and stainless steel) using 10 donors and ageing fingerprints in either ambient, rainwater, or underground for 1 and 5 months. In all, 120 fingerprints were imaged using ToF-SIMS, and each was run in positive and negative modes. A fingerprint expert compared the fingerprint ridge detail produced by the standard process to the ToF-SIMS images. In over 50% of the samples, ToF-SIMS was shown to improve fingerprint ridge detail visualised by the respective standard process for all surfaces tested. In over 90% of the samples, the ridge detail produced by ToF-SIMS was equivalent to standard development across all different ageing and exposure conditions. The data shows that there is a benefit to running the ToF-SIMS in both positive and negative modes, even if no ridge detail was seen in one mode.

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