A study of field emission current in MEMS capacitors with bottom electrode covered by dielectric film

The potential distribution in a MEMS capacitor with a thin dielectric film on the bottom electrode and under the presence of field emission leakage current is presented for the first time. The paper also demonstrated the build-up of dielectric charging during this process. The investigation is based on obtaining current-voltage characteristics in clockwise and counter clockwise loops and analyzing the transport mechanisms in MIM capacitors. Same procedure is applied to monitor the dielectric charging build-up during field emission in MEMS capacitors. The data of pristine current-voltage characteristics in both MIM and MEMS are used to determine the Voltage drops across the dielectric film and the gap as well as their dependence on the flowing current.

Automated summary

This paper presents the potential distribution in a MEMS capacitor with a thin dielectric film and field emission leakage current, and demonstrates the accumulation of dielectric charging during this process. Current-voltage characteristics in clockwise and counter clockwise loops are analyzed to understand the transport mechanisms in MIM capacitors, and the same procedure is applied to monitor dielectric charging build-up during field emission in MEMS capacitors. The data obtained from pristine current-voltage characteristics in both MIM and MEMS are used to determine the voltage drops across the dielectric film and the gap, and their dependence on the flowing current.