☆ 4.6 Article

Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2023)

Related references

Note: Only part of the references are listed.

Article Chemistry, Physical

Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers

Artur Lachowski et al.

Summary: The thermal instability of InxGa1-xN quantum wells (QWs) hinders the construction of efficient blue and green LEDs and laser diodes. In this study, a method to overcome this problem by heavy Si doping of the GaN barrier layers is presented. The presence of silicon atoms increases the energy barrier for gallium vacancies migration, effectively reducing the possibility of diffusion of gallium vacancies. As a result, improved thermal stability of QWs was achieved and significant degradation was not observed up to temperatures of 980 degrees C.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

Add to Collection

Article Materials Science, Multidisciplinary

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

Roman Hrytsak et al.

Summary: This study examines the diffusion of native point defects in the interface region of the InN/GaN heterostructure. The results show that metal vacancies can migrate across the interface and favor spatial segregation near the InN/GaN interface.

COMPUTATIONAL MATERIALS SCIENCE (2021)

Add to Collection

Article Nanoscience & Nanotechnology

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

Julita Smalc-Koziorowska et al.

Summary: The thermal degradation of In-rich InxGa1-xN quantum wells was studied, with the origin explained by the diffusion of metal vacancies leading to void formation and structural transformation. Different doping conditions affected the thermal degradation differently, with a crucial reduction in metal vacancy concentration needed to improve resistance.

ACS APPLIED MATERIALS & INTERFACES (2021)

Add to Collection

Article Multidisciplinary Sciences

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Mikolaj Grabowski et al.

Summary: This experiment provides experimental evidence that point defects, most likely gallium vacancies, induce decomposition of InGaN quantum wells at high temperatures. The study found that point defects play an important role in the decomposition of InGaN at high temperatures by comparing samples grown on unimplanted and implanted GaN substrates.

SCIENTIFIC REPORTS (2021)

Add to Collection

Article Physics, Applied

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Yao Chen et al.

Summary: This study investigates the impact of GaN-buffer growth temperature on the efficiency of InGaN/GaN quantum wells, revealing that high-temperature growth promotes the creation of surface defects leading to a collapse in internal quantum efficiency. Theoretical analysis suggests that these defects are likely to be nitrogen vacancies. Furthermore, the study shows that surface defects are mainly generated at the early stage of GaN growth and reach a steady state concentration determined by the growth temperature.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Chemistry, Multidisciplinary

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Thomas F. K. Weatherley et al.

Summary: This study demonstrates the successful spatial resolution and analysis of nonradiative point defects in InGaN/GaN quantum wells using high-resolution cathodoluminescence. The different types of point defects were identified by contrasting behaviors and their densities were measured from 10^14 cm^-3 to as high as 10^16 cm^-3. The results show the interplay between point defects and carrier dynamics, highlighting the impact of point defects on carrier diffusion lengths and nonradiative behaviors.

NANO LETTERS (2021)

Add to Collection

Article Physics, Applied

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Camille Haller et al.

APPLIED PHYSICS EXPRESS (2019)

Add to Collection

Article Physics, Applied

Point defects in group III nitrides: A comparative first-principles study

Yinlu Gao et al.

JOURNAL OF APPLIED PHYSICS (2019)

Add to Collection

Article Physics, Applied

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

C. Haller et al.

APPLIED PHYSICS LETTERS (2018)

Add to Collection

Article Physics, Applied

Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

Vadim P. Sirkeli et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)

Add to Collection

Review Chemistry, Physical

Computationally predicted energies and properties of defects in GaN

John L. Lyons et al.

NPJ COMPUTATIONAL MATERIALS (2017)

Add to Collection

Article Physics, Applied

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

C. Haller et al.

APPLIED PHYSICS LETTERS (2017)

Add to Collection

Article Materials Science, Multidisciplinary

Migration mechanisms and diffusion barriers of carbon and native point defects in GaN

Alexandros Kyrtsos et al.

PHYSICAL REVIEW B (2016)

Add to Collection

Article Physics, Applied

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Andrew M. Armstrong et al.

JOURNAL OF APPLIED PHYSICS (2015)

Add to Collection

Article Physics, Applied

Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1-xN

K. Koehler et al.

JOURNAL OF APPLIED PHYSICS (2013)

Add to Collection

Article Physics, Applied

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Jinqiao Xie et al.

APPLIED PHYSICS LETTERS (2008)

Add to Collection

Article Materials Science, Multidisciplinary

Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy

S Hautakangas et al.

PHYSICAL REVIEW B (2005)

Add to Collection

Article Physics, Applied

Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency -: art. no. 104914

K Köhler et al.

JOURNAL OF APPLIED PHYSICS (2005)

Add to Collection

Article Materials Science, Multidisciplinary

Diffusivity of native defects in GaN

S Limpijumnong et al.

PHYSICAL REVIEW B (2004)

Add to Collection

Article Materials Science, Multidisciplinary

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers -: art. no. 045205

J Oila et al.

PHYSICAL REVIEW B (2001)

Add to Collection

© Peeref 2019-2024. All rights reserved.