4.5 Article

Enhanced temperature stability of Li2Mg3SnO6-based ceramics by using BLCT composite additives

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ELSEVIER
DOI: 10.1016/j.mseb.2023.116698

Keywords

Sintering; Dielectric property; Li2Mg3SnO6; Ceramic

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Li2Mg3SnO6-based ceramics with xwt%BLCT (Bi2O3-LiF-CaF2-TiO2, x = 4, 8, 12, 16) were investigated for their sintering properties, phase composition, microstructure, and microwave dielectric properties. The results showed that all sintered samples consisted of the main phase Li2Mg3SnO6 and the second phases Bi2O3, Mg2SnO4, and CaSnO3. The addition of BLCT significantly improved the sintering ability and dielectric performance of the ceramics. The densification temperature decreased from 1360°C to 1050°C with the addition of BLCT. As x increased, the quality factor (Q x f) decreased, while the dielectric constant (er) and temperature resonance frequency coefficient (zf) increased. The Li2Mg3SnO6-12wt%BLCT ceramics exhibited the best comprehensive performance with er of -12.0, Q x f of 10470 GHz, and zf of -2.1ppm/°C, which makes it a potential alternative material for communication components.
Li2Mg3SnO6-xwt%BLCT (Bi2O3-LiF-CaF2-TiO2, x = 4, 8, 12, 16) ceramics were prepared. The sintering prop-erties, phase composition, microstructure and microwave dielectric properties of Li2Mg3SnO6-based ceramics were studied when x increased from 4 to 16. The results show that all sintered samples are composed of the main phase Li2Mg3SnO6 and the second phase Bi2O3, Mg2SnO4 and CaSnO3. Appropriate BLCT additive significantly enhanced sintering ability and dielectric performance of Li2Mg3SnO6-based ceramics. The densification tem-perature of Li2Mg3SnO6-based ceramics decreased from 1360 & DEG;C to 1050 & DEG;C due to the addition of BLCT. With the increase of x, the value of quality factor (Q x f) gradually decreases, while the value of dielectric constant (er) and temperature resonance frequency coefficient (zf) gradually increase. For Li2Mg3SnO6-12 wt%BLCT ceramics, the best comprehensive performance of er -12.0, Q x f -10470 GHz, and zf --2.1ppm/& DEG;C can be obtained. Which is expected to be an alternative material for communication component.

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