Room temperature RF magnetron sputtered nanocrystalline NiO thin films for highly responsive and selective H2S gas sensing at low ppm concentrations

We report on the H2S gas sensing performance of nanocrystalline NiO thin films sputtered on alumina substrate via RF magnetron sputtering using NiO target at room temperature. Nanocrystalline nature with granular morphology of the films was observed along with the hydrophobic nature (& theta;w -123.5 degrees), as investigated by GIXRD, FESEM, and wettability measurements. PL spectrum indicates the presence of oxygen or nickel va-cancies/defects, which was further confirmed by the XPS measurements. The H2S gas sensing characteristics of NiO thin films have been studied at different operating temperatures (200-425 degrees C) and gas concentrations (1-200 ppm). It shows the highest sensor response (Rg/Ra) of -28.8 for 200 ppm H2S gas at 400 degrees C (with a fast response/recovery time of -108 s/47 s). Further, NiO thin films confirm the high sensitivity, selectivity, and stability towards H2S gas with detection limit of 135 ppb. The H2S gas sensing mechanism with NiO is also explained.

Automated summary

We investigated the H2S gas sensing performance of nanocrystalline NiO thin films sputtered on an alumina substrate by RF magnetron sputtering. The films exhibited a granular morphology and hydrophobic nature (-123.5 degrees contact angle). Oxygen or nickel vacancies/defects were observed based on the PL spectrum and confirmed by XPS measurements. The NiO thin films showed high sensitivity, selectivity, and stability towards H2S gas, with a detection limit of 135 ppb and a maximum sensor response (Rg/Ra) of -28.8 for 200 ppm H2S gas at 400 degrees C.