A simple method to prepare triangle-shaped Ag8SnS6 nanoparticles and tune its band gap

Semiconductors Ag8SnS6 (ATS) nanoparticles were synthesized by a simple one-pot method. Meanwhile, Se was added to the ATS process to form semiconductors Ag8SnS6-xSex (ATSSe) (x = 0.0, 0.2, 0.4, 0.6, 0.8) nanoparticles. The prepared ATS nanoparticles were mainly triangle in shape with grain sizes ranging from 15 - 60 nm, and ATSSe nanoparticles were formed after the addition of Se during the synthesis process. Phase transformation of the synthesized nanoparticles rhombohedral crystalline ATS to cubic ATSe was observed for Se substitution ratios x in the range of 0.2 - 0.8. The band gap of ATSSe nanoparticles was in the range of 1.16 - 0.85 eV. This finding suggests that Se substitution is an effective method to regulate the band gap and structure of ATS.

Automated summary

Semiconductors Ag8SnS6 (ATS) nanoparticles were synthesized using a simple one-pot method, and semiconductors Ag8SnS6-xSex (ATSSe) (x = 0.0, 0.2, 0.4, 0.6, 0.8) nanoparticles were formed by adding Se during the ATS process. The ATS nanoparticles were mainly triangle in shape with grain sizes ranging from 15 - 60 nm, and the addition of Se resulted in the formation of ATSSe nanoparticles. Phase transformation from rhombohedral crystalline ATS to cubic ATSe was observed for Se substitution ratios x in the range of 0.2 - 0.8. The band gap of ATSSe nanoparticles ranged from 1.16 - 0.85 eV. This finding suggests that Se substitution is an effective method to regulate the band gap and structure of ATS.