Related references
Note: Only part of the references are listed.Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate
Depu Ma et al.
MATERIALS LETTERS (2020)
GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review
Ruize Sun et al.
IEEE ACCESS (2020)
Structural and compositional analyses of a strained AlGaN/GaN superlattice
M. Shiojiri et al.
JOURNAL OF APPLIED PHYSICS (2006)
Role of inclined threading dislocations in stress relaxation in mismatched layers
P Cantu et al.
JOURNAL OF APPLIED PHYSICS (2005)
Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
P Cantu et al.
APPLIED PHYSICS LETTERS (2003)
Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si
O Contreras et al.
APPLIED PHYSICS LETTERS (2002)
Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases
D Jena et al.
APPLIED PHYSICS LETTERS (2002)
Anti-surfactant in III-nitride epitaxy - Quantum dot formation and dislocation termination
S Tanaka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2000)
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
JP Ibbetson et al.
APPLIED PHYSICS LETTERS (2000)
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
MA Reshchikov et al.
JOURNAL OF APPLIED PHYSICS (2000)