Journal
MATERIALS CHEMISTRY AND PHYSICS
Volume 309, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2023.128421
Keywords
Manganese oxide; Silver doping; Metal-semiconductor; Heterojunctions; UV-NIR photosensors
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Ag-Mn2O3 was evaluated as a new photosensing material for detecting UV-visible-NIR radiation, and its performance was compared to single-phase Mn2O3. The Ag-Mn2O3 prepared by coprecipitation method showed significantly higher electrical current variations than Mn2O3, which can be attributed to a decrease in bandgap energy, the formation of metal-semiconductor heterojunctions, as well as the lower work function and higher free electron concentration of silver.
Ag-Mn2O3 was evaluated as a new photosensing material to detect UV-visible-NIR radiation, and the results were compared to those obtained from single-phase Mn2O3. The materials were prepared by the coprecipitation method, from metal nitrates, and later calcined at 500 degrees C, in air. The morphology of Ag-Mn2O3 consists of cuboid-shaped microparticles, with silver nanowires randomly attached to its surface. The photoresponse profiles show uniform and reproducible variations in electrical current caused by light exposure. However, for Ag-Mn2O3 they were up to 46 times higher than those measured in Mn2O3. This improvement can be attributed to the decrease in the bandgap energy of Ag-Mn2O3, associated with the formation of metal-semiconductor heterojunctions and the fact that silver has a lower work function and a greater number of free electrons.
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