A clear path to enhanced performance: In:SnO2/(Er2S3-ZrS3-NiS2)GO as an effective transparent electrode in photoelectrochemical cells

Erbium, zirconium and nickel sulphide conjugated with graphene oxide composite on Indium-doped tin oxide thin film was fabricated from single source precursor via spin coating as a transparent conductive electrode in photoelectrochemical cell. The study investigated the crystal structure, elemental composition, and morphology of the photoelectrode, as well as its optical and electrical properties. X-ray diffraction investigation revealed the presence of (Er2S3-ZrS3-NiS2)GO in the composite while the scanning electron microscopy (SEM) analysis revealed the presence of hexagonal structures. The composite material was verified to contain the aforementioned elements through the utilization of XPS and EDX analysis. Optical band gap obtained through Tauc's plot was 2.9 eV. The electrical characteristics of the photoelectrochemical cell was assessed by various techniques. Throughout the conducted investigations, it was evident that the thin film exhibited a substantially increased photo-current density in comparison to the conditions in the absence of light. The photoelectrode demonstrated an enhanced specific capacitance under illuminated conditions to show a hike across all the applied scan rates. Under illumination, the specific capacitance of the photoelectrode was measured at 580 F g(-1), while without a light source, it was recorded at 469 F g(-1). This study presents a highly efficient photoelectrode suitable for effective integration into renewable energy systems.

Automated summary

A composite of erbium, zirconium, and nickel sulphide conjugated with graphene oxide was fabricated as a transparent conductive electrode. The composite showed enhanced photo-current density and specific capacitance under illuminated conditions, making it suitable for integration into renewable energy systems.