Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon

The effect of adding an atomic layer annealing step to a plasma-enhanced atomic layer deposition process of aluminum nitride was investigated with commonly available materials. The refractive index, crystallinity, stoichiometry, and impurity concentrations were studied from films grown from trimethylaluminum and ammonia precursors at 300 degrees C on Si(111) substrates. Additional energy provided by the atomic layer annealing step during each deposition cycle was found to enhance the crystallinity and stoichiometry and increase the refractive index and film density. A polycrystalline hexagonal film with a weak c-axis orientation was obtained on substrates with and without native oxide, which is promising for applications that require high quality films at low temperatures. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1116/6.0002705

Automated summary

The effect of adding atomic layer annealing to a plasma-enhanced atomic layer deposition process of aluminum nitride was investigated. The study examined the refractive index, crystallinity, stoichiometry, and impurity concentrations of the films grown on Si(111) substrates. The additional energy provided by atomic layer annealing enhanced the film quality and density, making it suitable for applications requiring high-quality films at low temperatures.