Tunable electronic and optical properties of ferroelectric WS2/Ga2O3 heterostructures

To integrate two-dimensional (2D) materials into van der Waals heterostructures (vdWHs) is regarded as an effective strategy to achieve multifunctional devices. The vdWHs with strong intrinsic ferroelectricity is promising for applications in the design of new electronic devices. The polarization reversal transitions of 2D ferroelectric Ga2O3 layers provide a new approach to explore the electronic structure and optical properties of modulated WS2/Ga2O3 vdWHs. The WS2/Ga2O3? and WS2/Ga2O3? vdWHs are designed to explore possible characteristics through the electric field and biaxial strain. The biaxial strain can effectively modulate the mutual transition of two mode vdWHs in type II and type I band alignment. The strain engineering enhances the optical absorption properties of vdWHs, encompassing excellent optical absorption properties in the range from infrared to visible to ultraviolet, ensuring promising applications in flexible electronics and optical devices. Based on the highly modifiable physical properties of the WS2/Ga2O3 vdWHs, we have further explored the potential applications for the field-controlled switching of the channel in MOSFET devices.

Automated summary

Integrating 2D materials into van der Waals heterostructures is an effective strategy for multifunctional devices. Strong ferroelectricity in van der Waals heterostructures offers promising applications in new electronic devices. The reversed polarization transitions in 2D ferroelectric Ga2O3 layers provide a new approach to study the electronic structure and optical properties of modulated WS2/Ga2O3 vdWHs. By designing WS2/Ga2O3? and WS2/Ga2O3? vdWHs, the characteristics through electric field and biaxial strain can be explored.