Tunable valley splitting in two-dimensional CrBr3/VSe2 van der Waals heterostructure under strains and electric fields

Valleytronics opens up fascinating opportunities for using the valley degree of freedom in information storage and quantum computation. Here, based on the first-principles calculations, we investigate the effects of biaxial strains and electric fields on the magnetic, electronic, and valleytronic properties of two-dimensional CrBr3/VSe2 van der Waals (vdW) heterostructure consisting of two ferromagnetic monolayers. An interlayer magnetic phase transition from parallel to antiparallel is found when a compressive strain exceeds -2% 2 to the CrBr3 layer. Specifically, a large valley splitting about 30.8 meV is obtained in the system with antiparallel interlayer magnetic configurations under a compressive strain of -4% 3/VSe2 heterostructure. Our findings provide new insights into the future valleytronic applications for two-dimensional magnetic vdW heterostructures.

Automated summary

Based on first-principles calculations, this study investigates the effects of biaxial strains and electric fields on the magnetic, electronic, and valleytronic properties of a two-dimensional CrBr3/VSe2 van der Waals heterostructure. The results show that a magnetic phase transition from parallel to antiparallel occurs when the compressive strain exceeds -2%. A large valley splitting of about 30.8 meV is obtained under a compressive strain of -4% in the CrBr3/VSe2 heterostructure. These findings provide new insights into the future valleytronic applications of two-dimensional magnetic vdW heterostructures.