Related references
Note: Only part of the references are listed.Crystal Phase Control during Epitaxial Hybridization of III-V Semiconductors with Silicon
Marta Rio Calvo et al.
ADVANCED ELECTRONIC MATERIALS (2022)
A Pathway to Thin GaAs Virtual Substrate on On-Axis Si (001) with Ultralow Threading Dislocation Density
Chen Shang et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021)
Kinetically limited misfit dislocations formed during post-growth cooling in III-V lasers on silicon
Kunal Mukherjee et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon
Zizhuo Liu et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2020)
Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon
Jennifer Selvidge et al.
APPLIED PHYSICS LETTERS (2020)
Inversion Boundary Annihilation in GaAs Monolithically Grown on On-Axis Silicon (001)
Keshuang Li et al.
ADVANCED OPTICAL MATERIALS (2020)
Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si
Geunhwan Ryu et al.
APPLIED PHYSICS LETTERS (2020)
Heteroepitaxial Growth of III-V Semiconductors on Silicon
Jae-Seong Park et al.
CRYSTALS (2020)
Integration of III-V lasers on Si for Si photonics
Mingchu Tang et al.
PROGRESS IN QUANTUM ELECTRONICS (2019)
Heterogeneously Integrated InP/Silicon Photonics Fabricating fully functional transceivers
Richard Jones et al.
IEEE NANOTECHNOLOGY MAGAZINE (2019)
Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon
W. Li et al.
JOURNAL OF APPLIED PHYSICS (2018)
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
Bernardette Kunert et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
III-V quantum-dot lasers monolithically grown on silicon
Mengya Liao et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
Daehwan Jung et al.
JOURNAL OF APPLIED PHYSICS (2017)
Electrically pumped continuous-wave 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates
Siming Chen et al.
OPTICS EXPRESS (2017)
Electrically pumped continuous-wave III-V quantum dot lasers on silicon
Siming Chen et al.
NATURE PHOTONICS (2016)
Design rules for dislocation filters
T. Ward et al.
JOURNAL OF APPLIED PHYSICS (2014)
1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
Mingchu Tang et al.
OPTICS EXPRESS (2014)
InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
Andrew D. Lee et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2013)
Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates
E. A. Emelyanov et al.
RUSSIAN PHYSICS JOURNAL (2013)
Device engineering for silicon photonics
Xia Chen et al.
NPG Asia Materials (2011)
On Degradation Studies of III-V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation
Osamu Ueda
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
Influences of Strain and Phase Separation on the Alignment Characteristics of Five-Stacked InAs/InAlGaAs Quantum Dots Grown on InP(001)
Jin Soo Kim et al.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2009)
Hardness, yield strength, and dislocation velocity in elemental and compound semiconductors
I Yonenaga
MATERIALS TRANSACTIONS (2005)
Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates
VK Yang et al.
JOURNAL OF APPLIED PHYSICS (2003)
Share Paper
